features 1 of 6 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. inp hbt ldmos rf mems SUF-5033 0.1 ghz to 4.0 ghz, cascadable phemt mmic amplifier the SUF-5033 is a monolithically matched broadband high ip3 gain block covering 0.1 ghz to 4.0 ghz. this phemt fet-based amplifier uses a pat- ented self-bias darlington topology featuring a gain and temperature com- pensating active bias network that operates from a single 5 v supply. it offers efficient, cascadable performance in a compact 3 mm x 3 mm ceramic qfn package. it is well-suited for rf, lo, and if driver applica- tions. ? broadband performance ? high gain = 18.5 db at 2 ghz ? p1db = 20.5 dbm at 2 ghz ? 50 i/o low-noise, efficient gain block ? 5 v operation, no dropping resistor ? low gain variation versus temperature ? patented self-bias darlington circuit applications ? broadband communications ? test instrumentation ? military and space ? lo and if mixer applications ? high ip3 rf driver applica- tions rev a0 ds090605 9 package: qfn, 16-pin, 3 mm x 3 mm SUF-5033low noise, high gain sige hbt parameter specification unit condition min. typ. max. frequency of operation 0.1 4.0 ghz small signal power gain 16.0 18.5 db 2 ghz 16.0 db 4 ghz output power at 1 db compression 21.0 dbm 2 ghz 21.5 dbm 4 ghz output third order intercept point 27.6 dbm 2 ghz 27.9 dbm 4 ghz noise figure 3.6 db 2 ghz 4.0 db 4 ghz input return loss -10.3 db 2 ghz -11.1 db 4 ghz output return loss -19.0 db 2 ghz -23.8 db 4 ghz reverse isolation -24.0 db 2 ghz -23.0 db 4 ghz device operating voltage 5.0 v device operating current 90 ma gain variation vs. temperature -0.01 db/c thermal resistance 100 c/w junction to backside test conditions: v = 5 v, i d = 90 ma oip 3 tone spacing = 1 mhz, p out per tone = 0 dbm, z s = z l = 50 , 25c, with bias tees
2 of 6 rev a0 ds090605 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. SUF-5033 typical performance (circuit board data with bias tees) v s = 5 v, r bias = 20 , t = 25c, z = 50 absolute maximum ratings parameter rating unit max device current (l d )110ma max device voltage (v d ) 5.5 v max rf input power 20 dbm max dissipated power 605 mw max junction temperature (t j ) 150 c operating temperature range (t l ) -40 to + 85 c max storage temperature -65 to +150 c operation of this device beyond any one of these limits may cause permanent dam- age. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l ) / r th , j-l and t l = backside of die parameter units 200 mhz 500 mhz 1 ghz 2 ghz 4 ghz small signal gain db 20.1 19.9 19.6 18.5 16.2 output 3rd order intercept point (see note 1) dbm 28.5 27.6 27.9 output power at 1 db compression dbm 21.2 21.4 21.5 21.0 21.5 input return loss db 16.6 16.0 14.0 10.3 11.1 output return loss db 16.9 17.5 18.7 19.0 23.8 reverse isolation db 24.6 24.6 24.6 24.5 23.2 noise figure db 3.0 3.6 4.0 note 1: 0 dbm/tone, 1 mhz tone spacing caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the device under absolute maximum rating condi- tions is not implied. rohs status based on eu directive 2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 6 rev a0 ds090605 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. SUF-5033 typical performance
4 of 6 rev a0 ds090605 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. SUF-5033 typical performance
5 of 6 rev a0 ds090605 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. SUF-5033 package drawing notes: 1. all dimensions in millimeters. 2. backside is ground. pcb stencil drawing pin function description 2 rfin this pad is dc coupled and matched to 50 . an external dc block is required. 11 rfout/bias this pad is dc coupled and matched to 50 . bias is applied through this pad. pkg bottom gnd package bottom must be connected to rf/dc ground.
6 of 6 rev a0 ds090605 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com. SUF-5033 device assembly ordering information part number description devices/container SUF-5033 qfn, 16-pin,3 mm x 3 mm SUF-5033pcba-410 2.45 ghz evaluation board n/a
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